WTD1386 Datasheet, PDF (1/4 Pages) Weitron Technology – PNP EPITAXIAL PLANAR TRANSISTOR

PNP EPITAXIAL PLANAR TRANSISTOR
P b Lead(Pb)-Free
Features:
* Low V_CE(sat) = -0.55(Typ.) (I_C/IB=-4A/-0.1A)
* Excellent DC Current Gain Characteristics
Mechanical Data:
* Case : Molded Plastic
* Weight : 0.925 grams
WTD1386
1.BASE
2.COLLECTOR
3.EMITTER
23
1
D-PAK(TO-252)
ABSOLUTE MAXIMUM RATINGS(T_A=25ºC)
Rating
Collector to Base Voltage
Symbol
V_CBO
Collector to Emitter Voltage
V_CEO
Collector to Base Voltage
Collector Current
Total Device Disspation ^TC ^{= 25°C}
Junction Temperature
Storage Temperature
V_EBO
I_C(DC)
I_C(Pulse)
P_D
Tj
Tstg
Value
Unit
-30
V
-20
V
-6
V
-5
A
-10
20
W
+150
˚C
-55 to +150
˚C
Device Marking
WTD1386 = 1386
WEITRON
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http://www.weitron.com.tw
09-Sep-05