W4401DW Datasheet, PDF (3/5 Pages) Weitron Technology – Epitaxial Planer Transistor PNP Silicon

W4401DW
–100
T _A = 25°C
500
–80
450
400
350
300
–60
–40
–250
–200
–150
500
T A = 25°C
200
100
V_CE= –5 V
–3V
–1V
–100
–20
–50 A
50
0
I B =0
0
–1
–2
–3
–4
–5
–0.2
–0.5
–1
–2
–5
–10
–20
–50 –100
V _CE , C OLLE C TOR TO E MITTE R VOLTAG E (V)
I _C, C OLLE C T OR C UR R E NT (mA)
FIG.3 Grounded Emitter Output Characteristics( ) FIG.4 DC Current Gain vs. Collector Current ( )
500
T A = 100°C
25°C
–40°C
200
100
50
–0.2
–0.5
–1
–2
V_CE= – 6V
–5
–10
–20
–50 –100
I _C, C OLLE C T OR C UR R E NT (mA)
FIG.5 DC Current Gain vs. Collector Current ( )
–1
I _C / I _B =10
–0.5
–1
–0.5
–0.2
–0.1
–0.05
–0.2
–0.5
–1
–2
–5
–10
–20
–50 –100
I _C, C OLLE C T OR C UR R E NT (mA)
FIG.6 Collector-Emitter Saturation Voltage vs
Collector Current ( )
1000
TA =25 C
V_{C E}=-12V
500
–0.2
200
TA =100 C
25 C
100
–0.1
-40 C
–0.05
50
–0.2
–0.5
–1
–2
–5
–10
–20
–50 –100
I _C, C OLLE C T OR C UR R E NT (mA)
FIG.7 Collector-Emitter Saturation Voltage vs
Collector Current ( )
–0.2
–0.5
–1
–2
–5
–10
–20
I _E , E MIT T E R C UR R E NT (mA)
–50 –100
FIG.8 Gain Bandwidth Product vs Emitter Current
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