W4401DW Datasheet, PDF (1/5 Pages) Weitron Technology – Epitaxial Planer Transistor PNP Silicon

Epitaxial Planer Transistor
PNP Silicon
Maximum Ratings
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current-Continuous
Thermal Characteristics
Characteristics
(1)
Total Device Dissipation TA=25 C
Thermal Resistance, Junction to Ambient
Junction and Storage, Temperature
Device Marking
W4401DW=5K
Symbol
VCEO
VCBO
VEBO
IC
W4401DW
3
2
1
4
5
6
PNP+PNP
6 ₅₄
1
23
SOT-363(SC-88)
Value
-50
-60
-6.0
-150
Unit
Vdc
Vdc
Vdc
mAdc
Symbol
Max
Unit
PD
380
mW
R_θJA
328
C/W
TJ,Tstg
-55 to +150
C
Electrical Characteristics (TA=25 C Unless Otherwise noted)
Characteristics
Symbol
Min Max Unit
Off C har acter istics
Collector-Emitter Breakdown Voltage⁽²⁾ (IC=-1.0mAdc.IB=0)
V(BR)CEO
Collector-Base Breakdown Voltage (IC=-50 uAdc, IE=0)
V(BR)CBO
Emitter-Base Breakdown Voltage (IE=-50 uAdc, IC=0)
V(BR)EBO
Emitter Cutoff Current (VEB =-6.0 Vdc)
IEBO
Collector Cutoff Current (VCB=-60Vdc)
1. Device Mounted FR4 glass epoxy printed circuit board using the minimun recommended footprint.
2. Pulse Test:Pulse Width^<=300uS, Duty Cycle^<=2.0%
ICBO
-50
-
Vdc
-60
-
Vdc
-6.0
-
Vdc
-
-0.1
nAdc
-
-0.1
nAdc
WEITRON
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