PZT5551 Datasheet, PDF (3/4 Pages) Weitron Technology – NPN Silicon Planar Epitaxial Transistor

PZT5551
Characteristics Curve
1000
125˚C
25˚C
100
75˚C
10
hFE@VCE = 5V
1
1
10
100
1000
Collector Current-IC (mA)
Fig.1 Current Gain & Collector Current
1000
100000
VCE(sat) @IC=10 IB
10000
1000
100
125˚C
75˚C
25˚C
10
0.1
1
10
100
1000
Collector Current (mA)
Fig.2 Saturation Voltage & Collector Current
100
25˚C
125˚C
75˚C
10
V_BE(sat) @ I_C=10I_B
100
0.1
1
10
100
1000
Collector Current-IC (mA)
Fig.3 Saturation Voltage & Collector Current
1000
100
Cob
1
0.1
1
10
100
1000
Reverse Biased Voltage(V)
Fig.4 Capacitance & Reverse-Biased Voltage
10000
1000
PT=1ms
PT=100ms
PT=1s
100
V_CE=10V
1
1
10
100
Collector Current (mA)
Fig.5 Cutoff Frequency & Collector Current
10
1
1
10
100
1000
Forward Voltage-V_CE(V)
Fig.6 Safe Operation Area
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http://www.weitron.com.tw
05-Jul-05