PZT5551 Datasheet, PDF (1/4 Pages) Weitron Technology – NPN Silicon Planar Epitaxial Transistor

NPN Silicon Planar Epitaxial Transistor
BASE
1
COLLECTOR
2,4
3
EMITTER
PZT5551
1. BASE
4
2.COLLECTOR
3.EMITTER
4.COLLECTOR
1
2
3
SOT-223
ABSOLUTE MAXIMUM RATINGS (T_A=25˚C)
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current (DC)
Total Device Disspation
Junction Temperature
Storage, Temperature
Symbol
VCEO
VCBO
VEBO
IC
PD
Tj
Tstg
Value
Unit
160
V
180
V
6
V
600
mA
1.5
W
150
˚C
-55 to +150
˚C
Device Marking
PZT5551=5551
ELECTRICAL CHARACTERISTICS
Characteristics
Collector-Emitter Breakdown Voltage
(I_C =1mA,IB=0)
Collector-Base Breakdown Voltage
(I_C =100µA,IE=0)
Emitter-Base Breakdown Voltage
(I_E=10 µA,IC=0)
Collector-Emitter Cutoff Current
(V_CB =120V,IE=0)
Emitter-Base Cutoff Current
(V_EB=4V,IC=0)
Symbol Min
V_(BR)CEO
160
V_(BR)CBO
180
Typ
-
-
V_(BR)EBO
6
-
I_CBO
-
-
IEBO
-
-
Max Unit
-
V
-
V
-
V
50
nA
50
nA
WEITRON
1/4
http://www.weitron.com.tw
05-Jul-05