FMMT591 Datasheet, PDF (3/4 Pages) Zetex Semiconductors – PNP SILICON PLANAR MEDIUM POWER TRANSISTOR

FMMT591
TYPICAL TRANSIENT CHARACTERISTICS
0.6
+25°C
0.5
0.4
0.3
I_C/I_B=10
0.2
I_C/I_B=50
0.1
0
1
10
100
1000
10000
IC-Collector Current (mA)
Fig.1 V_CE(sat) vs I_C
400
+100°C
300
+25°C
200
-55°C
100
V_CE=5V
0
1
10
100
1000
10000
IC-Collector Current (mA)
Fig.3 h_FE vs I_C
0.6
I_C/I_B=10
0.5
0.4
0.3
-55°C
+25°C
0.2 +100°C
0.1
0
1
10
100
1000
10000
IC-Collector Current (mA)
Fig.2 V_CE(sat) vs I_C
I_C/I_B=10
1.0
0.8
0.6
-55°C
0.4
+25°C
+100°C
0.2
0
1
10
100
1000
10000
IC-Collector Current (mA)
Fig.4 V_BE(sat) vs I_C
1.2
V_CE=5V
1.0
0.8
0.6
-55°C
0.4
+25°C
+100°C
0.2
0
1
10
100
1000
10000
IC-Collector Current (mA)
Fig.5 V_BE(on) vs I_C
10
1
DC
1s
0.1
100ms
10ms
1ms
100µs
0.01
0.1
1
10
100
V_CE-Collector Emitter Voltage (V)
Fig.6 Safe Operating Area
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23-Jan-06