FMMT591 Datasheet, PDF (1/4 Pages) Zetex Semiconductors – PNP SILICON PLANAR MEDIUM POWER TRANSISTOR

FMMT591
General Purpose Transistor PNP Silicon
P b Lead(Pb)-Free
Maximum Ratings
Rating
Collector-Base Breakdown Voltage
Symbol
V_(BR)CEO
COLLECTOR
3
1
BASE
2
EMITTER
Value
-60
3
1
2
SOT-23
Unit
V
Collector-Emitter Breakdown Voltage
V_(BR)CBO
-80
V
Emitter-Base Breakdown Voltage
V_(BR)EBO
-5.0
V
Collector Current
Power Dissipation
T_A=25°C
Junction Temperature Range
I_C
-1.0
A
P_D
500
mW
T_J
+150
°C
Storage Temperature Range
T_STG
-55 to +150
°C
Device Marking
FMMT591=591
Electrical Characteristics (T_A=25ºC Unless Otherwise noted)
Characteristics
Symbol
Min
Typ
Max
Unit
Off Characteristics
Collent-Emitter Breakdown Voltage¹
I_C = -1.0mA, I_B = 0
V_(BR)CEO
-60
-
-
V
Collent-Base Breakdown Voltage
I_C = -100µA, I_E = 0
Collent Cutoff Current
I_C = 0, I_E = -100µA
Collector Cut-off Current
V_CB = -60V, I_E = 0
Emitter Cut-off Current
V_EB = -4.0V, I_C = 0
V_(BR)CBO
-80
-
-
V
V_(BR)EBO
-5.0
-
-
V
I_CBO
-
I_EBO
-
-
-0.1
µA
-
-0.1
µA
WEITRON
1/4
http://www.weitron.com.tw
23-Jan-06