BC856 Datasheet, PDF (3/4 Pages) NXP Semiconductors – PNP general purpose transistors

BC856A/B-BC857A/B/C
BC858A/B/C-BC859B/C
WE ITR ON
BC857/BC858/BC859 Series
2.0
1.5
VCE=10V
TA=25 C
1.0
0.7
0.5
0.3
0.2 _{-0.2 -0.5 -1.0 -2.0}
-5.0 -10 -20
-50 -100 -200
IC, COLLECTOR CURRENT (mAdc)
Figure1.Normalized DC Current Gain
-1.0
-0.9 ^{TA=25 C}
-0.8
VBE_(sat)@IC/BC=10
-0.7
-0.6
VBE_(ON)@VCE= -10V
-0.5
-0.4
-0.3
-0.2
-0.1
VCE(sat)@IC/BC=10
0
-0.1 -0.2
-0.5 -1.0 -2.0
-5.0 -10 -20
-50 -100
IC, COLLECTOR CURRENT (mAdc)
Firure2. "Saturation" And "On" Voltage
-2.0
TA=25 C
-1.6
-1.2
-0.8 ^IC=
-10mA
-0.4
IC= -50mA
IC= -20mA
IC= -200mA
IC= -100mA
0
-0.02
-0.1
-1.0
-10 -20
IB, BASE CURRENT (mA)
Figure 3. Collector Saturation Region
1.0
-55 C to +125 C
1.2
1.6
2.0
2.4
2.8
-0.2
-1.0
-10
-100
IC, COLLECTOR CURRENT (mA)
Figure 4. Base-Emitter Temperature Coefficient
10
Cib
7.0
TA=25 C
5.0
3.0
Cob
2.0
1.0
-0.4 -0.6
-1.0
-2.0
-4.0 -6.0 -10
-20 -30 -40
VR, REVERSE VOLTAGE (VOLTS)
Figure 5. Capacitances
400
300
200
150
VCE= -10V
TA= 25 C
100
80
60
40
30
20
-0.5 -1.0
-2.0 -3.0 -5.0
-10 -20 -30 -50
IC, COLLECTOR CURRENT (mAdc)
Figure 6. Current-Gain- Bandwidth Product
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Rev A 12-Apr-05