BC856 Datasheet, PDF (1/4 Pages) NXP Semiconductors – PNP general purpose transistors

BC856A/B-BC857A/B/C
BC858A/B/C-BC859B/C
General Purpose Transistor
PNP Silicon
COLLECTOR
3
1
BASE
2
EMITTER
Maximum Ratings ( TA=25 C unless otherwise noted)
Rating
Symbol
Collector-Emitter Voltage
BC856
BC857
BC858,BC859
Collector-Base Voltage
BC856
BC857
BC858,BC859
Emitter-Base VOltage
Collector Current-Continuous
Thermal Characteristics
VCEO
VCBO
VEBO
IC
Characteristics
Total Device Dissipation FR-5 Board ⁽¹⁾
(Note 1.)T_A=25 C
Derate above 25 C
Thermal Resistance, Junction to Ambient
Symbol
PD
R _θJA
Total Device Dissipation Alumina
Substrate, (Note 2.) T_A=25 C
PD
Derate above 25 C
Thermal Resistance, Junction to Ambient
R _θJA
Junction and Storage, Temperature
TJ,Tstg
3
1
2
SOT-23
MARKING DIAGRAM
3
XX = Device
Code (See
1
2 _{Table Below)}
Value
-65
-45
-30
-80
-50
-30
-5.0
-100
Max
225
1.8
556
300
2.4
417
-55 to +150
Unit
V
V
V
mAdc
Unit
mW
mW/ C
C/W
mW
mW/ C
C/W
C
1.F R -5=1.0 x 0.75 x 0.062 in. 2.Alumina=0.4 x 0.3 x 0.024 in. 99.5% alumina.
Electrical Characteristics (TA=25 C Unless Otherwise noted)
Characteristics
Symbol
Min
Typ _Max
Unit
Off Characteristics
Collector-Emitter Breakdown Voltage BC856 Series
V_(BR)CEO
-65
-
-
V
(IC= -10mA)
BC857 Series
-45
-
-
BC858, BC859 Series
-30
-
-
Collector-Emitter Breakdown Voltage
(I_C=-10 µA ,VEB=0)
BC856 Series
BC857 Series
V(BR)CES
-80
-
-
V
-50
-
-
BC858, BC859 Series
-30
-
-
Collector-Base Breakdown Voltage
(I_C=-10 µA)
BC856 Series
BC857 Series
V_(BR)CBO
-80
-50
-
-
-
V
-
BC858, BC859 Series
-30
-
-
Emitter-Base Breakdown Voltage
(I_E=-1.0 µA)
BC856 Series
BC857 Series
BC858, BC859 Series
-5.0
V_(BR)EBO
-5.0
-5.0
-
-
V
-
-
-
-
Collector Cutoff Current (V_CB=-30V)
(VCB=-30V, TA=150 C)
I_CBO
-
-
-
-15
nA
-
-4.0
m_A
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Rev A 12-Apr-05