2N4003K Datasheet, PDF (3/6 Pages) Weitron Technology – N-Channel Enhancement Mode Power MOSFET

2N4003K
Switching
Turn-on Delay Time⁴
V_GS=4.5V, V_DD=5.0V,I_D=0.1A, R_G=50Ω
Rise Time⁴
V_GS=4.5V, V_DD=5.0V,I_D=0.1A, R_G=50Ω
4
V_GS=4.5V, V_DD=5.0V,I_D=0.1A, R_G=50Ω
Fall Time⁴
V_GS=4.5V, V_DD=5.0V,I_D=0.1A, R_G=50Ω
Total Gate Charge
V_GS=5.0V, V_DS =24V, I_D=0.1A
Threshold Gate Charge
V_GS=5.0V, V_DS =24V, I_D=0.1A
Gate-Source Charge
V_GS=5.0V, V_DS =24V, I_D=0.1A
Gate-Drain Change
V_GS=5.0V, V_DS =24V, I_D=0.1A
t _d( on)
-
16.7
-
tr
-
47.9
-
ns
t_d )
-
65.1
-
tf
-
64.2
-
Q_g
-
1.15
-
Q _g(TH)
-
0.15
-
nC
Q_gs
-
0.32
-
Q_gd
-
0.23
-
Source-Drain Diode Characteristics
Forward On Voltage
V_GS =0V, I_S =10mA
T_J = 25°C
T_J = 125°C
V_SD
-
0.65
0.7
V
0.45
-
Reverse Recovery Time
V_GS =0V, I_S =10mA, dls/dt=8A/μs
t_rr
-
14
-
nS
Note : 3. Pulse Test: pulse width ≤ 300 μs, duty cycle ≤ 2%.
4. Switching characteristics are independent of operating junction temperatures.
WEITRON
3/6
http://www.weitron.com.tw
08-Sep-09