2N4003K Datasheet, PDF (2/6 Pages) Weitron Technology – N-Channel Enhancement Mode Power MOSFET

2N4003K
Electrical Characteristics(T_A=25°C Unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
Static
Drain-Source Breakdown Voltage
V_GS =0, I_D =100 A
Gate-Source Threshold Voltage³
V_DS =V_GS , I_D=250 A
Gate-Source Leakage Current
V_GS = ± 10V
Zero Gate Voltage Drain Current (T_J =25˚C)
V_DS =30V,V_GS =0
Drain-Source On-Resistance³
V_GS =2.5V,I_D= 10mA
V_GS =4.0V,I_D=10mA
Forward Transconductance³
V_DS =3.0V, I_D=10mA
V_(BR)DSS
30
V_{G S(Th)}
0.8
I_GSS
-
I_DSS
-
-
-
V
-
1.6
-
±1.0
-
1
R_DS(on)
-
-
g_fs
-
1.5
2.0
Ω
1.0
1.5
0.33
-
S
Dynamic
Input Capacitance
V_GS=0V, V_DS=5.0V, f=1.0MHz
Output Capacitance
V_GS=0V, V_DS=5.0V, f=1.0MHz
Reverse Transfer Capacitance
V_GS=0V, V_DS=5.0V, f=1.0MHz
Ciss
-
21
-
Coss
-
19.7
-
pF
Crss
-
8.1
-
WEITRON
2/6
http://www.weitron.com.tw
08-Sep-09