WTC2312 Datasheet, PDF (2/6 Pages) Weitron Technology – N-Channel Enhancement Mode Power MOSFET

WTC2312
Electrical Characteristics(T_A=25°C Unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
Static
Drain-Source Breakdown Voltage
V_GS =0, I_D
Gate-Source Threshold Voltage
V_DS =V_GS , I_D=250 A
Gate-Source Leakage Current
V_GS = ± 8V
Drain-Source Leakage Current(Tj=25˚C)
V_DS =20V,V_GS =0
Drain-Source On-Resistance
V_GS =1.8V,I_D=4.0A
V_GS =2.5V,I_D=4.5A
V_GS =4.5V,I_D=5.0A
Forward Transconductance
V_DS =10V, I_D=5.0A
V_(BR)DSS
20
V_GS(Th) 0.4
I_{GS S}
-
I_{DS S}
-
R _DS(on)
-
-
-
g_fs
-
-
-
V
0.6
1.0
-
±100
nA
-
1
31
24
57
47
mΩ
21
41
40
-
S
Dynamic
Input Capacitance
V_GS=0V, V_DS=8V, f=1.0MHz
Output Capacitance
V_GS=0V, V_DS=8V, f=1.0MHz
Reverse Transfer Capacitance
V_GS=0V, V_DS=8V, f=1.0MHz
Ciss
-
500
-
Coss
-
300
-
pF
Crss
-
140
-
WEITRON
2/6
http://www.weitron.com.tw
Rev.B 04-Aug-09