WTC2312 Datasheet, PDF (1/6 Pages) Weitron Technology – N-Channel Enhancement Mode Power MOSFET

WTC2312
N-Channel Enhancement
Mode Power MOSFET
P b Lead(Pb)-Free
Features:
1 GATE
* Super High Dense Cell Design For Low R_DS(ON)
RDS(ON)<41mΩ @VGS=4.5V
RDS(ON)<47mΩ @VGS=2.5V
RDS(ON)<57mΩ @VGS=1.8V
* Capable of 2.5V gate drive
* Rugged and Reliable
* Lower On-Resistance
Application:
* Power Management in Notebook Computer.
* Portable Equipment.
* Battery Powered System.
3 DRAIN
2 SOURCE
DRAIN CURRENT
4.9 AMPERES
DRAIN SOUCE VOLTAGE
20 VOLTAGE
3
1
2
SOT-23
Maximum Ratings(T_A=25℃ Unless Otherwise Specified)
Rating
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain Current³ ,V_GS@4.5V(T_A=25°C)
I_D
,V_GS@4.5V(T_A=70°C)
Pulsed Drain Current ^{1, 2}
I_DM
Total Power Dissipation(TA=25°C)
P_D
Maximum Junction-ambient ³
R_θJA
Operating Junction Temperature Range
T_J
Storage Temperature Range
T_stg
Value
20
±8
4.9
3.4
15
0.75
140
+150
-55~+150
Unit
V
A
W
°C /W
°C
°C
Device Marking
WTC2312=N12
WEITRON
http://www.weitron.com.tw
1/6
Rev.B 04-Aug-09