WTC2306A Datasheet, PDF (2/6 Pages) Weitron Technology – N-Channel Enhancement Mode Power MOSFET

WTC2306A
Electrical Characteristics (T_A = 25℃ Unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
Static
Drain-Source Breakdown Voltage
V_{G S} =0 , I_D=250μA
Gate-Source Threshold Voltage
V_DS =V_{G S} , I_D=250_μA
Gate-Source Leakage Current
VGS=±20V
Drain- Sou rce Leakage Current(Tj=25˚C)
V_{D S} =30V,V_{G S} =0
Drain- Sou rce Leakage Current(Tj=70˚C)
V_{D S} =24V,V_{G S} =0
Drain-Source On-Resistance
VGS =10V,ID=5A
VGS =4.5V,ID=5A
VGS =2.5V,ID=2.6A
VGS =1.8V,ID=1.0A
Forward Transconductance
V_DS=5 V,I_D=5A
V_(BR)DSS
30
-
-
V
V_GS(Th) 0.5
-
1.2
I_{G S S}
-
-
±100
nA
-
I_{D S S}
-
-
1
μA
-
25
-
R_{DS(o n)}
-
-
-
g_fs
-
-
30
-
-
35
50
mΩ
-
90
13
-
S
Dynamic
Input Capacitance
V_{G S} =0V, V_DS =25V,f=1.0MHz
Output Capacitance
V_{G S} =0V, V_DS =25V,f=1.0MHz
Reverse Transfer Capacitance
V_{G S} =0V, V_DS =25V,f=1.0MHz
C _iss
-
C _oss
-
C _rss
-
660 1050
90
-
pF
70
-
WEITRON
2/6
http:www.weitron.com.tw
13-May-05