WTC2306A Datasheet, PDF (1/6 Pages) Weitron Technology – N-Channel Enhancement Mode Power MOSFET

N-Channel Enhancement
Mode Power MOSFET
3 DRAIN
1
GATE
Features:
*Super High Dense Cell Design For Low R_DS(ON)
R _DS(ON) <30mΩ@V _GS =10V
*Rugged and Reliable
*Simple Drive Requirement
*SOT-23 Package
2
SOURCE
WTC2306A
DRAIN CURRENT
5 AMPERES
DRAIN SOURCE VOLTAGE
30 VOLTAGE
3
1
2
SOT-23
Maximum Ratings(T_A=25℃ Unless Otherwise Specified)
Rating
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_{G S}
Con tinuous Drain Current ³ ,V_GS @4.5V(T_A
I_D
,V_GS @4.5V(T_A
Pulsed Drain Current ^1,2
I_DM
Total Power Dissipation(TA=25˚C)
P_D
Maximum Thermal Resistance Junction-ambient ³
R _θJA
Operating Junction and Storage Temperature Range
T_J, T_stg
Value
30
±12
5
4
20
1.38
90
- 55~+150
Unit
V
A
W
˚C/W
˚C
Device Marking
WTC2306A=2306A
WEITRON
http:www.weitron.com.tw
1/6
13-May-05