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| PZT159 Datasheet, PDF (2/4 Pages) Weitron Technology – PNP Silicon Planar High Current Transistor | |||
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PZT159
ELECTRICAL CHARACTERISTICS (TA=25ËC Unless otherwise noted)
Characteristic
Symbol Min
Typ Max Unit
ON CHARACTERISTICS(1)
DC Current Gain
VCE=-1V, IC=-10mA
VCE=-1V, IC=-2A
VCE=-1V, IC=-5A
VCE=-1V, IC=-10A
Collector-Emitter Saturation Voltage
IC=-100mA, IB=-10mA
IC=-1A, IB=-100mA
IC=-2A, IB=-200mA
IC=-5A, IB=-500mA
Base-Emitter Saturation Voltage
IC=-5A, IB=-500mA
Base-Emitter On Voltage
VCE=-1V, IC=-5A
hFE1 100
200
-
hFE2 100
200
300
-
hFE3
75
90
-
hFE4
10
25
-
-
VCE(sat)
-
-
-
VBE(sat)
-
-20
-50
-85
-140 mV
-155 -210
-370 -460
-1.08 -1.24 V
VBE(on)
-
-0.935 -1.07 V
DYNAMIC CHARACTERISTICS
Transition Frequency
VCE=-10V, IC=-100mA, f=50MHz
Output Capacitance
VCB=-10V, IE=0, f=1MHz
fT
-
120
- MHz
Cob
-
74
-
pF
SWITCHING TIMES
Switching Times
VCC=-10V,IC=-2A, IB1=IB2=-200mA
ton
-
82
-
ns
to
-
350
-
Note 1.Pulse Test : Pulse width < 300µs, Duty cycle ⤠20%.
WEITRON
2/4
http://www.weitron.com.tw
11-Jul-07
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