PZT159 Datasheet, PDF (1/4 Pages) Weitron Technology – PNP Silicon Planar High Current Transistor

PZT159
PNP Silicon Planar High Current Transistor
P b Lead(Pb)-Free
COLLECTOR
2, 4
BASE
1
3
EM ITTER
SOT-223
4
1. BASE
2.COLLECTOR
3.EMITTER
4.COLLECTOR
1
2
3
ABSOLUTE MAXIMUM RATINGS (T_A=25 C)
Rating
Symbol
Value
Unit
Collector to Base Voltage
Collector to Emitter Voltage
V_CBO
V_CEO
-100
V
-60
V
Collector to Base Voltage
V_EBO
-6
V
Collector Current
I_C(DC)
-5
A
Collector Current
I_C(Pulse)
-15
A
Total Device Disspation T_A=25°C
P_D
3
W
Junction Temperature
Tj
+150
˚C
Storage, Temperature
Tstg
-55 to +150
˚C
*Device mounted in a typical manner on a P.C.B with copper 4 inches x 4 inches(min).
Device Marking
PZT159 =159
ELECTRICAL CHARACTERISTICS
Characteristics
Collector-Base Breakdown Voltage
I_C=-100µA, I_E=0
Collector-Emitter Breakdown Voltage⁽¹⁾
I_C=-10mA, I_B=0
Emitter-Base Breakdown Voltage
I_E=-100µA, I_C=0
Collector Cut-O Current
V_CB=-80V, I_E=0
Collector Cut-O Current
V_CES=-60V
Emitter-Cut-O Current
V_EB=-6V, I_C=0
Symbol Min
BV_CBO -100
BV_CEO
-60
BV_EBO
-6
I_CBO
-
I_CES
-
I_EBO
-
Max
-
-
-
-
-
-
Max
-
-
-
-50
-50
-10
Unit
V
V
V
nA
nA
nA
WEITRON
1/4
http://www.weitron.com.tw
11-Jul-07