MUN5311DW Datasheet, PDF (2/29 Pages) Weitron Technology – Dual Bias Resistor Transistor NPN+PNP Silicon

MUN5311DW Series
WEITRON
Electrical Characteristics (TA=25 C Unless Otherwise noted)
Characteristics
Symbol Min
Typ Max Unit
Off Characteristics
Collector-Base Breakdown Voltage
(IC=10 uA ,IE=0)
Collector-Emitter Breakdown Voltage³
(IC=2.0mA, IB =0)
Collector-Base Cutoff Voltage
(V_CB=50 V, IE =0)
Collector-Emitter Cutoff Current
(VCE=50V, IB=0)
Emitter-Base Cutoff Current
(VEB=6.0V, IC=0)
V(BR)CBO
50
V(BR)CEO
50
ICBO
-
ICEO
-
MUN5311DW
IEBO
-
MUN5312DW
-
MUN5313DW
-
MUN5314DW
-
MUN5315DW
-
MUN5316DW
-
MUN5330DW
-
MUN5331DW
-
MUN5332DW
-
MUN5333DW
-
MUN5334DW
-
MUN5335DW
-
-
-
V
-
-
V
-
100
nA
-
500
nA
-
0.5
mA
-
0.2
-
0.1
-
0.2
-
0.9
-
1.9
-
4.3
-
2.3
-
1.5
-
0.18
-
0.13
-
0.2
On Characteristics³
Collector-Emitter Saturation Voltage (IC=10mA, IB =0.3mA)
VCE(sat)
-
(IC=10mA, IB=5mA)
MUN5330DW/MUN5331DW
(IC=10mA, IB =1mA)
MUN5315DW/MUN5316DW
MUN5332DW/MUN5333DW/MUN5334DW
3. Pulse Test: Pulse Width < 300 us, Duty Cycle < 2.0%
-
0.25 Vdc
WEITRON
http://www.weitron.com.tw
2/29
Rev.A 29-Dec-05