MUN5311DW Datasheet, PDF (1/29 Pages) Weitron Technology – Dual Bias Resistor Transistor NPN+PNP Silicon

Dual Bias Resistor Transistor
NPN+PNP Silicon
P b Lead(Pb)-Free
MUN5311DW Series
6
5
4
Q₂
R1 _R2
R2
Q₁
R1
1
2
3
6 ₅₄
123
SOT-363(SC-88)
Maximum Ratings ( TA=25˚C unless otherwise noted, common for Q1 adn Q2, -minus sign for Q1(PNP) omitted)
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Collector Current-Continuous
Symbol
VCEO
VCBO
IC
Value
50
50
100
Unit
Vdc
Vdc
mAdc
Thermal Characteristics
Characteristics(One Junction Heated)
Total Device Dissipation
TA=25˚C
Derate above 25˚C
Thermal Resistance, Junction to Ambient
Characteristics(Both Junctions Heated)
Total Device Dissipation
TA=25˚C
Derate above 25˚C
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Lead
Junction and Storage, Temperature Range
1.FR-4 @ minimum pad.
2.FR-4 @ 1.0 x 1.0 inch Pad
Symbol
PD
RθJA
Symbol
PD
RθJA
RθJL
TJ,Tstg
Max
187(1)
256(2)
1.5(1)
2.0(2)
670(1)
490(2)
Max
250(1)
385(2)
2.0(1)
3.0(2)
493(1)
325(2)
188(1)
208(2)
-55 to +150
Device Marking and Resistor Values
Device
MUN5311DW
MUN5312DW
MUN5313DW
MUN5314DW
MUN5315DW
MUN5316DW
Marking
11
12
13
14
15
16
R1(K)
10
22
47
10
10
4.7
R2(K)
10
22
47
47
Device
MUN5330DW
MUN5331DW
MUN5332DW
MUN5333DW
MUN5334DW
MUN5335DW
Marking
30
31
32
33
34
35
Unit
mW
mW/˚C
˚C/W
Unit
mW
mW/ C
˚C/W
˚C/W
˚C
R1(K)
1.0
2.2
4.7
4.7
22
2.2
R2(K)
1.0
2.2
4.7
47
47
47
WEITRON
http://www.weitron.com.tw
1/29
Rev.B 20-Jan-09