MMBTH10_07 Datasheet, PDF (2/6 Pages) Weitron Technology – NPN 1.1 GHz RF Transistor

MMBTH10
ELECTRICAL CHARACTERISTICS (Ta=25 °C unless otherwise noted ) (Countinued)
Characteristics
Collector-Emitter Voltage (IC =10mA , IB = 0 )
Collector-Base Voltage (IC =10µA , IE = 0)
Emitter-Base Voltage (IE =10µA , IC =0)
Collector cut-off current ( IE = 0 , VCB = 25V )
Emitter cut-off current ( IC = 0 , VEB = 2.0V )
DC current gain (IC=4mA , VCE = 10V )
Collector-Emitter Saturation (IC=4mA ,IB = 0.4mA )
Base-Emitter On Voltage (IC=4mA , VCE = 10V )
Transition frequency (IC =4mA , VCE = 10V , f =100MHz )
Collector-Base Capacitance(V_CB=10V ,IE = 0 , f =1.0MHz )
Common-Base Feedback Capacitance
(V_CB= 10V , IE= 0 , f = 1MHz )
Collector Base Time Constant
(IC =4mV , VCB = 10V , f = 31.8MHz )
Symbol
VCEO
VCBO
VEBO
I _CBO
I _EBO
hFE
VCE(sat)
VBE(on)
fT
Ccb
Crb
rb’Cc
Min
Typ
Max
Unit
25
-
-
V
30
-
-
V
3
-
-
V
-
-
100
nA
-
-
100
nA
60
-
-
-
-
-
0.5
V
-
-
0.95
V
0.65
1.1
-
GHZ
-
-
0.7
pF
-
-
0.65
pF
-
-
9.0
ps
WEITRON
2/6
http://www.weitron.com.tw
09-Feb-07