MMBTH10_07 Datasheet, PDF (1/6 Pages) Weitron Technology – NPN 1.1 GHz RF Transistor

MMBTH10
NPN 1.1 GHz RF Transistor
COLLECTOR
P b Lead(Pb)-Free
BASE
FEATURES
Designed for VHF/UHF Amplifier Applications
and High Output VHF oscillators.
High Current Gain Bandwidth product.
EMITTER
Ideal for Mixer and RF Amplifier Application with Collector Current in the
100mA~20mA Range in Common emitter or Common base mode of operations.
3
1
2
SOT-23
MAXIMUM RATINGS (Ta=25 C)
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
Total Power Dissipation FR-5 Board ⁽¹⁾
TA =25°C
Derate above =25°C
Thermal Resistance , Junction Ambient
Junction Temperature
Storage Temperature
1. Tj = 25°C unless otherwise specified.
Symbol
VCEO
VCBO
VEBO
IC
PD
RθJA
TJ
Tstg
Value
25
30
3
50
225
1.8
556
+150
-55~150
Unit
V
V
V
mA
mW
mW/°C
°C/W
°C
°C
Device Marking
MMBTH10=3EM , HT10
WEITRON
1/6
http://www.weitron.com.tw
09-Feb-07