MMBT3906T Datasheet, PDF (2/6 Pages) Diodes Incorporated – PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

MMBT3906T
Electrical Characteristics (TA=25 C unless otherwise noted) (Countinued)
Characteristics
Symbol
Min
On Characteristics ⁽³⁾
DC Current Gain
(IC= -0.1 mA , VCE= -1.0V)
(IC= -1.0 mA , VCE= -1.0 V)
(IC= -10 mA , VCE= -1.0V)
(IC= -50 mA , VCE= -1.0V)
(IC= -100 mA , VCE= -1.0V)
Collector-Emitter Saturation Voltage
(IC= -10 mA , IB= -1.0mA)
(IC= -50 mA , IB= -5.0mA)
Base-Emitter Saturation Voltage
(IC= -10 mA , IB= -1.0 mA)
(IC= -50 mA , IB= -5.0 mA)
60
80
HFE
100
60
30
VCE(sat)
-
-
VBE(sat)
-0.65
-
Small-signal Characteristics
Current-Gain-Bandwidth Product (4)
(IC= -10 mA , VCE= -20 V, f=100MHz)
Output Capacitance
(VCB= -5.0 V, IE=0, f=1.0MHz)
Input Capacitance
(VEB= -0.5 V, IC=0, f=1.0MHz)
Input Impedance
(VCE= -10V, IC=-1.0 mA, f=1.0 kHz)
Voltage Feeback Radio
(VCE= -10V, IC=-1.0 mA, f=1.0 kHz)
Small-Signal Current Gain
(VCE= -10V, IC=-1.0 mA ,f=1.0 kHz)
Output Admittance
(VCE= -10V, IC=-1.0 mA , f=1.0kHz)
Noise Figure
(VCE= -5.0V, IC= -100 µA ,RS=1.0kΩ, f=1.0kHz)
fT
250
Cobo
-
Cibo
-
hie
2.0
hre
0.1
hfe
100
hoe
3.0
NF
-
Switching Characteristics
Delay Time
Rise Time
(Vcc= -3.0 V, VBE= 0.5 V
Ic= -10 mA, IB1= -1.0 mA)
td
-
tr
-
Storage Time
Fall Time
(Vcc= -3.0 V,
ts
-
Ic= -10 mA , IB1=IB2= -1.0 mA)
tf
-
3.Pulse Test:Pulse Width<=300 µS, Duty Cycle<=2.0%.
WEITRON
http://www.weitron.com.tw
2/6
Max
Unit
-
-
-
300
-
-
-0.25
V
-0.4
-0.85
V
-0.95
-
MHz
4.5
pF
10
pF
12
kΩ
10
x 10-4
400
-
60
µmhos
4.0
dB
35
ns
35
225
ns
75
28-Sep-09