MMBT3906T Datasheet, PDF (1/6 Pages) Diodes Incorporated – PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

General Purpose Transistor
PNP Silicon
P b Lead(Pb)-Free
Maximum Ratings
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current-Continuous
Thermal Characteristics
Characteristics
Total Device Dissipation FR-5 Board ⁽¹⁾
TA=25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, ⁽²⁾ TA=25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction Temperature
Storage Temperature
COLLECTOR
3
1
BASE
2
EMITTER
Symbol
VCEO
V_CBO
V_EBO
I_C
MMBT3906T
3
1
2
SC-89
(SOT-523F)
Value
-40
-40
-5.0
-200
Unit
V
V
V
mA
Symbol
P_D
R_θJA
P_D
R_θJA
T_J
Tstg
Max
200
1.6
600
300
2.4
400
-55 to +150
-55 to +150
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
°C
Device Marking
MMBT3906T = 2A
Electrical Characteristics (TA=25°C Unless Otherwise noted)
Characteristics
Off Characteristics
Collector-Emitter Breakdown Voltage⁽³⁾ (IC=-1.0mAdc.IB=0)
Collector-Base Breakdown Voltage (IC=-10 µAdc, IE=0)
Emitter-Base Breakdown Voltage (IE=-10 µAdc, IC=0)
Base Cutoff Current (VCE=-30 Vdc, VEB =-3.0 Vdc)
Collector Cutoff Current (VCE=-30Vdc, VEB=-3.0Vdc)
1. FR-4 Minimum Pad.
2. FR-4 1.0 x 1.0 Inch Pad.
3. Pulse Test : Pulse Width ≤ 300 µS, Duty Cycle ≤ 2.0%.
Symbol
Min Max Unit
V_(BR)CEO
-40
-
V
V_(BR)CBO
-40
-
V
V_(BR)EBO
-5.0
-
V
I_BL
-
-50
nA
I_CEX
-
-50
nA
WEITRON
1/6
http://www.weitron.com.tw
28-Sep-09