MBT2907ADW Datasheet, PDF (2/5 Pages) Weitron Technology – Dual General Purpose Transistor PNP+PNP Silicon

MBT2907ADW
Electrical Characteristics (TA=25 C unless otherwise noted) (Countinued)
Characteristics
Symbol
Min
Max
Unit
On Characteristics
DC Current Gain
(IC= -100uAdc, VCE=-10Vdc)
(IC= -1.0 mAdc, VCE= -10Vdc)
(IC= -10 mAdc, VCE= -10Vdc)
(IC= -150 mAdc, VCE= -10Vdc)
(IC= -500 mAdc, VCE= -10Vdc)
Collector-Emitter Saturation Voltage
(IC= -150 mAdc, IB= -15mAdc)
(IC= -500 mAdc, IB= -50mAdc)
Base-Emitter Saturation Voltage
(IC= 150 mAdc, IB= 15 mAdc)
(IC= 500 mAdc, IB= 50 mAdc)
Small-signal Characteristics
Current-Gain-Bandwidth Product
(IC= -50 mAdc, VCE= -20 Vdc, f=100MHz)
Output Capacitance
(VCB= -10 Vdc, IE=0, f=1.0MHz)
Input Capacitance
(VEB=-2.0 Vdc, IC=0, f=1.0MHz)
HFE
VCE(sat)
VBE(sat)
75
-
100
-
-
100
-
100
300
50
-
-
-0.4
Vdc
-
-1.6
-
-1.3
-
-2.6
Vdc
fT
Cobo
Cibo
200
-
MHz
-
8.0
pF
-
30
pF
Switching Characteristics
Turn-On Time
Delay Time
Rise Time
Turn-Off Time
(Vcc= -30 Vdc, Ic= -150 mAdc,
IB1= -15 mAdc)
t _off
-
45
td
-
10
ns
tr
-
40
toff
-
100
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