MBT2907ADW Datasheet, PDF (1/5 Pages) Weitron Technology – Dual General Purpose Transistor PNP+PNP Silicon

Dual General Purpose Transistor
PNP+PNP Silicon
Maximum Ratings
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current-Continuous
Thermal Characteristics
Characteristics
Total Device Dissipation TA=25 C
Thermal Resistance, Junction to Ambient
Junction and Storage, Temperature
Symbol
VCEO
VCBO
VEBO
IC
Symbol
PD
R_θJA
TJ,Tstg
MBT2907ADW
3
2
1
4
5
6
PNP+PNP
6 ₅₄
1
23
SOT-363(SC-88)
Value
-60
-60
-5.0
-600
Unit
Vdc
Vdc
Vdc
mAdc
Max
Unit
200
mW
625
C/W
-55 to +150
C
Device Marking
MBT2907ADW=2F
Electrical Characteristics (TA=25 C Unless Otherwise noted)
Characteristics
Symbol
Off C har acter istics
Collector-Emitter Breakdown Voltage⁽²⁾ (IC=-10mAdc.IB=0)
V(BR)CEO
Collector-Base Breakdown Voltage (IC=-10 uAdc, IE=0)
V(BR)CBO
Emitter-Base Breakdown Voltage (IE=10 uAdc, IC=0)
V(BR)EBO
Base Cutoff Current (VCE=-30 Vdc, VEB =-0.5 Vdc)
IBL
Collector Cutoff Current (VCE=-30Vdc, VEB=-0.5Vdc)
1. Device Mounted FR4 glass epoxy printed circuit board using the minimun recommended footprint.
2. Pulse Test:Pulse Width^<=300uS, Duty Cycle^<=2.0%
ICEX
Min Max Unit
-60
-
Vdc
-60
-
Vdc
-5.0
-
Vdc
-
-50
nAdc
-
-50
nAdc
WEITRON
http://www.weitron.com.tw