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| IRF640 Datasheet, PDF (2/6 Pages) NXP Semiconductors – N-channel TrenchMOS transistor | |||
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IRF640
Electrical Characteristics (TA = 25â Unless otherwise noted)
Characteristic
Static
Drain-Source Breakdown Voltage
ID=250µA,VGS=0
Symbol Min Typ
BVDSS
200
-
Gate-Source Threshold Voltage
ID=250µA,VDS=VGS
Gate-Source Leakage current
VGS=±20V
Drain-SourceLeakage Current(Tj=25ËC)
VDS=200V,VGS=0
Drain-SourceLeakage Current(Tj=125ËC)
VDS=160V,VGS=0
VGS(Th)
2.0
-
IGSS
-
-
-
-
IDSS
-
-
Static Drain-Source On-Resistance
ID=11A,VGS=10V
RDS(on)
-
-
Forward Transconductance
ID=11A,VDS=50V
Forward On Voltage
IS=18A, VGS=0V,Tj=25ËC
gfs
6.7
-
VSD
-
-
Dynamic
Input Capacitance
VGS=0V,VDS=25V,f=1.0MHz
Output Capacitance
VGS=0V,VDS=25V,f=1.0MHz
Reverse Transfer Capacitance
VGS=0V,VDS=25V,f=1.0MHz
Ciss
-
1300
Coss
-
430
Crss
-
130
Switching
Turn-on Delay Time
ID=18A, VDD=100V,RGS=9.1Ω,RL=5.4Ω
Rise Time
ID=18A, VDD=100V,RGS=9.1Ω,RL=5.4Ω
Turn-off Delay Time
ID=18A, VDD=100V,RGS=9.1Ω,RL=5.4Ω
Td(on)
-
-
Tr
-
-
Td(off)
-
-
Max
-
4.0
±100
25
250
0.18
-
2.0
-
-
-
21
77
68
Unit
V
nA
μA
Ω
S
V
pF
ns
WEITRON
http://www.weitron.com.tw
2/6
04-Nov-08
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