 English |
|
|
|
|
|
|
|
| IRF640 Datasheet, PDF (1/6 Pages) NXP Semiconductors – N-channel TrenchMOS transistor | |||
| |||
|
N-Channel Enhancement
Mode POWER MOSFET
P b Lead(Pb)-Free
3 DRAIN
Features:
1 GATE
*Super High Dense Cell Design For Low RDS(ON)
R DS(ON) <0.18 â¦@V GS =10V
* Single Pulse Avalanche Energy Rated
* SOA is Power Dissipation Limited
* Nanosecond Switching Speed
* Linear Transfer Characteristics
* High Input Impedance
2
SOURCE
IRF640
DRAIN CURRENT
18 AMPERES
DRAIN SOURCE VOLTAGE
200 VOLTAGE
1
2
3
1. GATE
2. DRAIN
3. SOURCE
TO-220AB
Maximum Ratings(Ta=25 C Unless Otherwise Specified)
Rating
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, (VGS@10V, TC=25ËC)
, (VGS@10V, TC=100ËC)
Pulsed Drain Current
Total Power Dissipation(TC=25ËC)
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Operating Junction Temperature Range
Storage Temperature Range
Symbol
VDS
VGS
ID
IDM
PD
RθJC
RθJA
TJ
Tstg
Value
200
±20
18
11
72
125
1
62
+150
- 55~+150
Unit
V
A
W
ËC/W
ËC/W
ËC
ËC
WEITRON
1/6
http://www.weitron.com.tw
04-Nov-08
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese