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| DTC114EE_08 Datasheet, PDF (2/13 Pages) Weitron Technology – Bias Resistor Transistor NPN Silicon | |||
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DTC114EE Series
WEITRON
Electrical Characteristics (TA=25ËC Unless Otherwise noted)
Characteristics
Symbol Min Typ Max Unit
Off Characteristics
Collector-Emitter Breakdown Voltage(2)
IC=2.0mA, IB=0
Collector-Base Breakdown Voltage
IC=10µA, IE=0
Collector-Base Cutoï¬ Voltage
VCB=50V, IE=0
Collector-Emitter Cutoï¬ Current
VCE=50V, IB=0
Emitter-Base Cutoï¬ Current
VEB=6.0V, IC=0
V(BR)CEO
50
V(BR)CBO
50
ICBO
-
ICEO
-
DTC114EE
-
DTC124EE
-
DTC144EE
-
DTC114YE
-
DTC114TE
-
DTC143TE
-
DTC123EE
IEBO
-
DTC143EE
-
DTC143ZE
-
DTC124XE
-
DTC123JE
-
DTC115EE
-
DTC144WE
-
2. Pulse Test: Pulse Width < 300us, Duty Cycle < 2.0%
-
-
V
-
-
V
-
100
nA
-
500
nA
-
0.5
-
0.2
-
0.1
-
0.2
-
0.9
-
1.9
-
2.3
mA
-
1.5
-
0.18
-
0.13
-
0.2
-
0.05
-
0.13
WEITRON
http://www.weitron.com.tw
2/13
12-Jun-06
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