DTC114EE_08 Datasheet, PDF (1/13 Pages) Weitron Technology – Bias Resistor Transistor NPN Silicon

Bias Resistor Transistor NPN Silicon
P b Lead(Pb)-Free
R1
1
BASE
R2
DTC114EE Series
COLLECTOR
3
2
EMITTER
3
1
2
SC-89
(SOT-523F)
Maximum Ratings (TA=25°C unless otherwise noted)
Rating
Symbol
Collector-Emitter Voltage
Collector-Base Voltage
V_CEO
V_CBO
Collector Current-Continuous
I_C
Value
Unit
50
V
50
V
100
mA
Thermal Characteristics
Characteristics
Total Device Dissipation FR-5 Board
FR-4 Board⁽¹⁾ T_A=25˚C
Derate above 25˚C
Thermal Resistance, Junction to Ambient⁽¹⁾
Total Device Dissipation FR-5 Board
FR-4 Board⁽²⁾ T_A=25˚C
Derate above 25˚C
Thermal Resistance, Junction to Ambient⁽²⁾
Junction Temperature Range
Storage Temperature Range
1.FR-4 @ Minimum pad
2.FR-4 @1.0 x 1.0 Inch pad
Symbol
P_D
R_θJA
P_D
R_θJA
T_J
Tstg
Max
200
1.6
600
300
2.4
400
-55 to +150
-55 to +150
Unit
mW
mW/ ˚C
˚C/W
mW
mW/ ˚C
˚C/W
˚C
˚C
Device Marking and ResistorValues
Device
Marking R1(K)
R2(K)
DTC114EE
8A
DTC124EE
8B
DTC144EE
8C
DTC114YE
8D
DTC114TE
94
DTC143TE
03
10
10
22
22
47
47
10
47
10
4.7
Device
DTC123EE
DTC143EE
DTC143ZE
DTC124XE
DTC123JE
DTC115EE
DTC144WE
Marking
8H
8J
8K
8L
8M
8N
8P
R1(K)
2.2
4.7
4.7
22
2.2
100
47
R2(K)
2.2
4.7
47
47
47
100
22
WEITRON
http://www.weitron.com.tw
1/13
Rev.A 29-Jul-08