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BCP56 Datasheet, PDF (2/3 Pages) Zetex Semiconductors – NPN SILICON PLANAR MEDIUM POWER TRANSISTOR
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BCP56
ON CHARACTERISTICS
DC Current Gain
(VCE = 2V, I C = 5mA)
(VCE = 2V, I C = 150mA)
(VCE = 2V, I C = 500mA)
Collector-Emitter Saturation Voltages
(IC = 0.5mA, IB = 50mA)
Base-Emitter ON Voltages
(VCE = 5V, I C = 0.5A, f=100MHz)
DYNAMIC CHARACTERISTICS
Transition frequency
(VCE = 2V, IC = 150mA)
CLASSIFICATION OF hFE2
Rank
Range
CHARACTERISTICS CURVE
1000
hFE1
63
hFE2
63
hFE3
40
VCE(sat)
-
VBE(ON)
-
-
-
-
-
250
-
-
-
-
-
500
mV
-
1
V
ft
-
130
-
MHz
10
63-160
100000
16
100-250
100
VCE = 10V
10
1
0.1
1
10
100
1000
10000
Collector Current (mA)
Fig.1 Current Gain & Collector Current
100
10000
1000
100
VBE(sat) @IC=10 IB
VCE(sat) @IC=10 IB
10
0.1
1
10
100
1000
10000
Collector Current (mA)
Fig.2 Saturation Voltage & Collector Current
10000
10
Cob
1
0.1
1
10
100
Reverse-Biased Voltage (V)
Fig.3 Capacitance & Reverse-Biased Voltage
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1000 PT=1ms
PT=100ms
100
PT=1s
10
1
1
10
100
1000
Forward Voltage-VCE(V)
Fig.4 Safe Operation Area
2/3
15-Jul-05
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