BCP56 Datasheet, PDF (1/3 Pages) Zetex Semiconductors – NPN SILICON PLANAR MEDIUM POWER TRANSISTOR

NPN Silicon Planar Epitaxial Transistor
P b Lead(Pb)-Free
BASE
1
COLLECTOR
2, 4
3
EMITTER
BCP56
1. BASE
4
2.COLLECTOR
3.EMITTER
4.COLLECTOR
1
2
3
SOT-223
ABSOLUTE MAXIMUM RATINGS (T_A=25˚C)
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current (DC)
Total Device Disspation T_A=25˚C
Junction Temperature
Storage, Temperature
Symbol
VCEO
VCBO
VEBO
IC(DC)
PD
Tj
Tstg
Device Marking
BCP56=BCP56
Value
Unit
80
V
100
V
5
V
1
A
2
W
150
˚C
-55 to +150
˚C
ELECTRICAL CHARACTERISTICS
Characteristics
Collector-Emitter Breakdown Voltage
(IC=1mA, IB=0)
Collector-Base Breakdown Voltage
(IC=100µA, IE=0)
Emitter-Base Breakdown Voltage
(IE=10 µA, IC=0)
Collector-Emitter Cutoff Current
(V_CB =30V , IE=0)
(V_CB =30V , IE=0 , Tj=125˚C)
Emitter-Base Cutoff Current
(V_EB=5V , IC=0)
WEITRON
http://www.weitron.com.tw
Symbol Min
V_(BR)CEO
80
V_(BR)CBO
V_(BR)EBO
100
5
Typ
-
-
-
Max
-
-
Unit
V
V
-
V
I_CBO
-
-
100
nA
-
-
10
uA
IEBO
-
-
100
nA
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15-Jul-05