BCP53 Datasheet, PDF (2/3 Pages) Zetex Semiconductors – PNP SILICON PLANAR MEDIUM POWER TRANSISTOR

BCP53
ON CHARACTERISTICS⁽¹⁾
DC Current Gain
(V_CE = -2V, I _C = 5mA)
(V_CE = -2V, I _C = 150mA)
(V_CE = -2V, I _C = 500mA)
Collector-Emitter Saturation Voltages
(I_C = -500mA, I_B = -50mA)
Base-Emitter ON Voltages
(V_CE = -2V, I _C = -500mA)
DYNAMIC CHARACTERISTICS
Transition frequency
(V_CE = -5V, IC = 10mA, f = 100MHz)
Note: 1. Pulse Test : Pulse Width ≤ 380µs, Duty Cycle ≤ 2%.
h_FE1
63
h_FE2
63
h_FE3
40
V_CE(sat)
-
V_BE(ON)
-
-
-
-
-
250
-
-
-
-
-
-500
mV
-
-1.0
V
ft
-
50
-
MHz
CLASSIFICATION OF hFE2
Rank
Range
CHARACTERISTICS CURVE
A
63-160
B
100-250
500
VCE = 2V
200
100
50
20
1
3 5 10
30 50 100
300 500 1000
I_C, Collector Current (mA)
Fig.1 Current Gain & Collector Current
1.0
0.8
VBE(sat) @IC/ IB = 10
0.6
VBE(on) @VCE = 2V
0.4
0.2
VCE(sat) @IC/ IB = 10
0
1
10
100
1000
I_C, Collector Current (mA)
Fig.2 Saturation Voltage, ON Voltage & Current Gain
500
300
VCE = 2V
100
50
20
1
10
100
1000
I_C, Collector Current (mA)
Fig.3 Cutoff Frequency & Collector Current
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25-Oct-05