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| BCP53 Datasheet, PDF (1/3 Pages) Zetex Semiconductors – PNP SILICON PLANAR MEDIUM POWER TRANSISTOR | |||
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PNP Silicon Planar Epitaxial Transistor
P b Lead(Pb)-Free
COLLECTOR
2, 4
1
BASE
3
EMITTER
BCP53
1. BASE
4
2.COLLECTOR
3.EMITTER
4.COLLECTOR
1
2
3
SOT-223
ABSOLUTE MAXIMUM RATINGS (TA=25ËC)
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current (DC)
Total Device Disspation TA=25ËC
Junction Temperature
Storage, Temperature
Symbol
VCEO
VCBO
VEBO
IC(DC)
PD
Tj
Tstg
Device Marking
BCP53=BCX53
Value
Unit
-80
V
-100
V
-5
V
1
A
1.5
W
150
ËC
-65 to +150
ËC
ELECTRICAL CHARACTERISTICS
Characteristics
Collector-Emitter Breakdown Voltage
(IC=-1mA, IB=0)
Collector-Base Breakdown Voltage
(IC=-100µA, IE=0)
Emitter-Base Breakdown Voltage
(IE=-10 µA, IC=0)
Collector-Emitter Cutoï¬ Current
(VCB =-30V , IE=0)
Emitter-Base Cutoï¬ Current
(VEB=-5V , IC=0)
WEITRON
http://www.weitron.com.tw
Symbol Min
V(BR)CEO
-80
V(BR)CBO -100
Typ
-
-
Max
-
-
Unit
V
V
V(BR)EBO
-5
-
-
V
ICBO
-
-
-100
nA
IEBO
-
-
-100
nA
1/3
25-Oct-05
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