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BC869 Datasheet, PDF (2/3 Pages) NXP Semiconductors – PNP medium power transistor
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BC869
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) (Countinued)
Characteristics
Symbol Min Typ
Max Unit
ON CHARACTERISTICS
DC Current Gain
VCE = -10V, I C = -5.0mA
VCE = -1.0V, IC = -500mA
VCE = -1.0V, IC = -1.0A
Collector-Emitter Saturation Voltage
IC = -1.0A, IB = -100mA
Base-Emitter Voltage
VCE = -1.0V, IC = -1.0A
TransitionFrequence
VCE = -5V, IC = -10mA, f = 100MHz
hFE1
50
-
-
hFE2
100
-
375
-
hFE3
60
-
-
VCE(sat)
-
-
-0.5
V
VBE(on)
-
fT
40
-
-1.0
V
-
-
MHz
DEVICE MARKING
Rank
Range
Marking
BC869
100-375
CEC
BC869-16
100-250
CGC
BC869-25
160-375
CHC
WEITRON
2/3
http://www.weitron.com.tw
15-Nov-07
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