BC869 Datasheet, PDF (1/3 Pages) NXP Semiconductors – PNP medium power transistor

PNP Plastic-Encapsulate Transistor
P b Lead(Pb)-Free
MAXIMUM RATINGS ( T_A=25°C unless otherwise noted)
Rating
Symbol
Collector-Base Voltage
V_CBO
Collector-Emitter Voltage
V_CEO
Emitter-Base Voltage
V_EBO
Collector Current Continuous
IC
Total Device Dissipation T_A=25°C
PD
Junction Temperature Range
TJ
Storage Temperature Range
Tstg
BC869
1. BASE
2. COLLECTOR
3. EMITTER
1
2
3
SOT-89
Value
-32
-20
-5.0
-1.0
500
+150
-65 to +150
Unit
V
V
V
A
mW
˚C
˚C
OFF CHARACTERISTICS
Characteristics
Collector-Base Breakdown Voltage, I_C = -0.1mA, I_E = 0
Collector-Emitter Breakdown Voltage, I_C = -1mA, I_B = 0
Emitter-Base Breakdown Voltage, I_E = -0.1mA,I_C = 0
Collector Cut-o Current, V_CB = -25V, I_E = 0
Emitter Cut-o Current, V_EB = -5.0V, I_C = 0
Symbol Min Max
V(BR)_CBO -32
-
V(BR)_CEO -20
-
V(BR)_EBO -5.0
-
I_CBO
-
-0.1
I_EBO
-
-0.1
Unit
V
V
V
µA
µA
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15-Nov-07