BC856BDW Datasheet, PDF (2/6 Pages) Weitron Technology – PNP Dual General Purpose Transistors

BC856BDW Series
Electrical Characteristics (T_A=25°C Unless Otherwise noted)
Characteristics
Symbol Min
Typ
Max
Unit
Off Characteristics
Collector-Emitter Breakdown Voltage
I_C=10mA
BC856
-65
-
BC857 V_(BR)CEO
-45
-
BC858
-30
-
-
-
V
-
Collector-Emitter Breakdown Voltage
V_EB=0V, I_C=-10µA
Emitter-Base Breakdown Voltage
I_C=-10µA
BC856
-80
-
BC857 ^V(BR)CES
-50
-
BC858
-30
-
BC856
-80
-
BC857 ^V(BR)CBO
-50
-
BC858
-30
-
-
-
V
-
-
-
V
-
Emitter-Base Breakdown Voltage
I_E=-1.0µA
Collector Cuto Current
V_CB=-30V
V_CB=-30V, T_A=150°C
BC856
BC857
V_(BR)EBO
-5.0
-5.0
-
-
BC858
-5.0
-
I_CBO
-
-
-
-
-
-
V
-
-15
nA
-4.0
µA
On Characteristics
DC Current Gain
V_CE = –5.0V, I_C = –10µA
V_CE = –5.0V, I_C = –2.0mA
BC856B, BC857B, BC858C
-
150
-
BC857C, BC858C
h_FE
-
270
-
-
BC856B, BC857B, BC858C
220
290
450
BC857C, BC858C
420
520
800
Collector-Emitter Saturation Voltage
I_C = –10mA, I_B = –0.5mA
I_C = –100mA, I_B = –5.0mA
Base-Emitter Saturation Voltage
I_C = –10mA, I_B = –0.5mA
I_C = –100mA, I_B = –5.0mA
Base-Emitter Voltage
V_CE = –5.0V, I_C = –2.0mA
V_CE = –5.0V, I_C = –10mA
V_CE(sat)
-
-
V_BE(sat)
-
-
-
-0.3
V
-
-0.65
-0.7
-
V
-0.9
-
V_BE(on)
-600
-
-
-
-750
mV
-820
Small-Signal Characteristics
Current-Gain-Bandwidth Product
V_CE = –5.0V, I_C = –10mA, f = 100MHz
Output Capacitance
V_CB = –10V, f = 1.0kHz
Noise Figure
V_CE = –5.0V, I_C = –0.2mA, R_S = 2.0kΩ, f = 1.0kHz, B_W = 200Hz
fT
100
-
-
MHz
Cob
-
-
4.5
pF
NF
-
-
10
dB
WEITRON
2/6
http://www.weitron.com.tw
14-Nov-07