BC856BDW Datasheet, PDF (1/6 Pages) Weitron Technology – PNP Dual General Purpose Transistors

PNP Dual General Purpose Transistors
P b Lead(Pb)-Free
3
2
1
4
5
6
PNP+PNP
BC856BDW Series
6 ₅₄
1
23
SOT-363(SC-88)
Maximum Ratings
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current-Continuous
Symbol
VCEO
VCBO
VEBO
IC
BC856 BC857 BC858
Unit
65
45
30
V
80
50
30
V
5.0
5.0
5.0
V
100
100
100
mA
Thermal Characteristics
Characteristics
Total Device Dissipation Per Device
FR-5 Board(1)T_A = 25°C
Derate Above 25°C
Thermal Resistance, Junction to Ambient
Junction Temperature Range
Storage Temperature Range
Note : FR-5=1.0 x 0.75 x 0.062 inch
Symbol
P_D
R_θJA
Tj
Tstg
Max
380
250
3.0
328
+150
-55 to +150
Device Marking
BC856BDW=3B , BC857BDW=3F , BC857CDW=3G , BC858BDW=3K , BC858CDW=3L
Unit
mW
mW/ °C
°C/W
°C
°C
WEITRON
1/6
http://www.weitron.com.tw
14-Nov-07