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| 2SC5706 Datasheet, PDF (2/5 Pages) Mospec Semiconductor – POWER TRANSISTOR(5A,50V,15W) | |||
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2SC5706
ELECTRICAL CHARACTERISTICS
Characteristics
Collector-Base Breakdown Voltage
IC=10µA, IE=0
Collector-Emitter Breakdown Voltage
IC=100µA, RBE=0
Collector-Emitter Breakdown Voltage
IC=1mA, RBE=â
Emitter-Base Breakdown Voltage
IE=10µA, IC=0
Collector Cut-Oï¬ Current
VCB=40V, IE=0
Emitter-Cut-Oï¬ Current
VEB=4V, IC=0
Symbol Min
BVCBO
80
BVCES
80
BVCEO
50
BVEBO
6
ICBO
-
IEBO
-
Max
-
-
-
-
-
-
Max Unit
-
V
-
V
-
V
-
V
1
µA
1
µA
ON CHARACTERISTICS(1)
DC Current Gain
VCE=2V, IC=500mA
Collector-Emitter Saturation Voltage
IC=1A, IB=50mA
IC=2A, IB=100mA
hFE
200
VCE(sat)
-
-
Base-Emitter Saturation Voltage
IC=2A, IB=100mA
VBE(sat)
-
Note 1.Pulse Test : Pulse width < 300µs, Duty cycle ⤠20%.
DYNAMIC CHARACTERISTICS
Transition Frequency
VCE=10V, IC=500
Output Capacitance
VCB=10V, f=1MHz
fT
-
Cob
-
-
560
-
-
135 mV
-
240
-
1.2
V
400
- MHz
15
-
pF
SWITCHING TIMES
See speciï¬ed test circuit (Turn-On Time)
See speciï¬ed test circuit (Storage Time)
See speciï¬ed test circuit (Fall Time)
ton
-
35
-
tstg
-
300
-
ns
tf
-
20
-
WEITRON
2/5
http://www.weitron.com.tw
25-Aug-05
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