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2SC5706 Datasheet, PDF (1/5 Pages) Mospec Semiconductor – POWER TRANSISTOR(5A,50V,15W)
NPN EPITAXIAL PLANAR TRANSISTOR
P b Lead(Pb)-Free
Features:
* Large current capacitance
* Low collector-to-emitter saturation voltage
* High-speed switching
* High allowable dissipation
Mechanical Data:
* Case : Molded Plastic
* Weight : 0.925 grams
ABSOLUTE MAXIMUM RATINGS(Ta=25˚C)
Rating
Collector to Base Voltage
Symbol
VCBO
Collector to Emitter Voltage
VCES
Collector to Emitter Voltage
VCEO
Collector to Base Voltage
Collector Current
Base Current
Total Device Disspation TA = 25°C
TC = 25°C
Junction Temperature
Storage Temperature
VEBO
IC(DC)
IC(Pulse)
IB
PD
Tj
Tstg
Device Marking
2SC5706 = 5706
WEITRON
1/5
http://www.weitron.com.tw
2SC5706
1.BASE
2.COLLECTOR
3.EMITTER
23
1
D-PAK(TO-252)
Value
Unit
80
V
80
V
50
V
6
V
5
A
7.5
1.2
A
0.8
W
15
+150
˚C
-55 to +150
˚C
25-Aug-05