2N7002W Datasheet, PDF (2/4 Pages) Diodes Incorporated – N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

2N7002W
Electrical Characteristics (TA=25 C Unless otherwise noted)
Characteristic
Symbol
Min
Typ
Static⁽¹⁾
Drain-Source Breakdown Voltage
V_GS=0V, ID=10 uA
Gate-Threshold Voltage
V_DS=V _GS, I_D=-250uA
Gate-body Leakage
V_GS= _+20V, V_DS=0V
Zero Gate Voltage Drain Current
V_DS=60V, V_GS=0V @ Tc=25 C
V_DS=60V, V_GS=0V @Tc=125 C
On-State Drain Current
V_GS=10V, V_DS=7.5V
Drain-Source On-Resistance
V_GS=5V, I_D=0.05A @ Tj=25 C
V_GS=10V, I_D=0.5A @ Tj =125 C
Forward Transconductance
V_DS=10V, I_D=0.2A
V_(BR)DSS
60
70
V_{GS (th)}
1.0
1.5
I_GSS
-
-
I_DSS
-
-
-
-
I_{D (on)}
0.5
1.0
R_{DS (on)}
-
3.2
-
4.4
g_fs
80
-
Dynamic
Input Capacitance
V_DS=25V, V_GS=0V, f=1MHZ
Output Capacitance
V_DS=25V, V_GS=0V, f=1MHZ
Reverse Transfer Capacitance
V_DS=25V, V_GS=0V, f=1MHZ
C_iss
-
22
C_oss
-
11
C_rss
-
2.0
Switching
Turn-On Time
V_DD=30V, R_L=150 Ω ,I_D=0.2A
V_GEN=10V, R_GEN=25 Ω
Turn-Off Time
V_DD=30V, R_L=150 Ω, I_D=0.2A
V_GEN=10V, R_GEN=25 Ω
t_d(on)
-
7.0
t_{d(off )}
-
11
Note:
1. Pulse Test: pulse width ^<_300us, duty cycle ^<_ 2%
Max
-
2.0
+_ ₁₀
1.0
500
-
7.5
13.5
-
50
25
5.0
20
20
Unit
V
V
nA
uA
A
Ω
mS
PF
ns
ns
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