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2N7002W Datasheet, PDF (1/4 Pages) Diodes Incorporated – N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
N-Channel MOSFET
Features:
*Low On-Resistance : 7.5 Ω
*Low Input Capacitance: 22PF
*Low Output Capacitance : 11PF
*Low Threshold Voltage :1 .5V(TYE)
*Fast Switching Speed : 7ns
3 DRAIN
1
GATE
2
SOURCE
2N7002W
3
1
2
SOT-323(SC-70)
Maximum Ratings (TA=25 C Unless Otherwise Specified)
Rating
Symbol
Value
Unit
Drain-Source Voltage
VDS
60
V
Gate-Source Voltage
VGS
±20
V
Continuous Drain Current (TA=25 C)
ID
115
mA
Power Dissipation (TA=25 C)
PD
200
mW
Maximax Junction-to-Ambient
R θJA
625
C/W
Operating Junction and Storage
Temperature Range
TJ, Tstg
-55 to 150
C
Device Marking
2N7002W=K72
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