2N5401 Datasheet, PDF (2/4 Pages) NXP Semiconductors – PNP high-voltage transistor

2N5401
ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued)
Characteristics
Symbol
Min
TYP
ON CHARACTERISTICS
DC Current Gain
(IC= -1.0/1.0 mAdc, VCE=-5.0 _Vdc)
DC Current Gain
(IC= -10 mAdc, VCE= -5.0 Vdc)
IC=-50 mAdc, VCE=-5.0 Vdc
Collector-Emitter Saturation Voltage
(IC= -25 mAdc, IB= -5.0 mAdc)
Base-Emitter Saturation Voltage
(IC= -50 Adc, IB= -5.0 mAdc)
Current-Gain-Bandwidth Product
(IC= 10 mAdc, VCE=-5.0 Vdc, f=30MHz)
hFE ₍₁₎
80
-
hFE ₍₂₎
80
-
hFE ₍₃₎
50
-
VCE(sat)
-
-
VBE(sat)
-
-
fT
100
-
Max
Unit
-
-
250
-
-
-
-0.5
Vdc
-1.0
Vdc
-
MHz
Classification of hFE(2)
Rank
Range
A
80-160
B
120-180
C
150-250
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