2N5401 Datasheet, PDF (1/4 Pages) NXP Semiconductors – PNP high-voltage transistor

PNP Transistors
ABSOLUTE MAXIMUM RATINGS (Ta=25 C)
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base VOltage
Collector Current
Total Device Dissipation T_A=25 C
Junction Temperature
Storage, Temperature
Symbol
VCEO
VCBO
VEBO
IC
PD
Tj
Tstg
2N5401
TO-92
1
1. EMITTER
2. BASE
2
3
3. COLLECTOR
2N5401
-150
-160
-5.0
600
0.625
150
-55 to +150
Unit
Vdc
Vdc
Vdc
mAdc
W
C
C
ELECTRICAL CHARACTERISTICS
Characteristics
Collector-Emitter Breakdown Voltage (IC= -1.0 mAdc, IB=0)
Collector-Base Breakdown Voltage (IC= -100 µAdc, IE=0)
Emitter-Base Breakdown Voltage (IE= -10 µAdc, IC=0)
Collector Cutoff Current (VCB= -120 Vdc, IE=0)
Emitter Cutoff Current (VEB= -4.0 Vdc, IC =0)
Symbol
Min
Max
V(BR)CEO -150
-
V(BR)CBO ^-160
-
V(BR)EBO _-5.0
-
ICBO
IEBO
-
-0.05
-
-0.05
Unit
Vdc
Vdc
Vdc
uAdc
uAdc
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