WCFS4016V1C Datasheet, PDF (2/9 Pages) Weida Semiconductor, Inc. – 256K x 16 Static RAM

WCFS4016V1C
Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature ................................. –65°C to +150°C
Ambient Temperature with
Power Applied............................................. –55°C to +125°C
Supply Voltage on V_CC to Relative GND^[1] .... –0.5V to +4.6V
DC Voltage Applied to Outputs
in High Z State^[1] ....................................–0.5V to V_CC + 0.5V
DC Input Voltage^[1] ................................ –0.5V to V_CC + 0.5V
Current into Outputs (LOW) ........................................ 20 mA
Operating Range
Range
Commercial
Ambient
Temperature
0°C to +70°C
V_CC
3.3V ± 0.3V
DC Electrical Characteristics Over the Operating Range
Parameter
Description
Test Conditions
V_OH
Output HIGH Voltage
V_OL
Output LOW Voltage
V_IH
Input HIGH Voltage
V_CC = Min.,
I_OH = –4.0 mA
V_CC = Min.,
I_OL = 8.0 mA
V_IL
Input LOW Voltage^[1]
I_IX
Input Load Current
GND < V_I < V_CC
I_OZ
Output Leakage Current
GND < V_OUT < V_CC, Output Disabled
I_CC
V_CC Operating
Supply Current
V_CC = Max., f = f_MAX =
1/t_RC
Comm’l
I_SB1
Automatic CE
Power-Down Current
—TTL Inputs
Max. V_CC, CE > V_IH
V_IN > V_IH or
V_IN < V_IL, f = f_MAX
I_SB2
Automatic CE
Power-Down Current
—CMOS Inputs
Max. V_CC,
CE > V_CC – 0.3V,
V_IN > V_CC – 0.3V,
or V_IN < 0.3V, f = 0
Comm’l
Capacitance^[2]
Parameter
Description
Test Conditions
C_IN
Input Capacitance
T_A = 25°C, f = 1 MHz, V_CC = 3.3V
C_OUT
I/O Capacitance
Note:
1. V_IL (min.) = –2.0V for pulse durations of less than 20 ns.
2. Tested initially and after any design or process changes that may affect these parameters.
12ns
Min.
Max.
Unit
2.4
V
0.4
V
2.0
–0.3
–1
–1
V_CC
V
+ 0.3
0.8
V
+1
µA
+1
µA
85
mA
40
mA
10
mA
Max.
Unit
8
pF
8
pF
2