WCMC2016V1X Datasheet, PDF (1/5 Pages) Weida Semiconductor, Inc. – 128K x 16 Pseudo Static RAM DIE

ADVANCE INFORMATION ^WCMC2016V1X
General Physical Specification
128K x 16 Pseudo Static RAM DIE
For product parameters and availability, please refer to the WCMC2016V1X product datasheet available on the Cypress
Semiconductor Website (http://www.cypress.com).
Mfg Part Number: GC2016V5A
Die Part Number:
Die Technology: PowerChip 0.165 µm
Metal I: 420 nm TiN/AlCu
Metal II: 880 nm TiN/Ti/AlCu/TiN
Metal III: None
Die Passivation: 780nm P-Si3N4 + Polyimide
Substrate Connection Req.: Ground
Wafer Diameter [mm]: 200.00
Die Size [µm]: 4010.74 x 1565.84
Step Size [µm]: 4095.44 x 1650.89
Scribe Size [µm]: 84.70 x 84.94
Pad Count: 64
Pad Size [µm]: 73.6 x 73.6
Product Thickness Guide
Code
XW
XW14
XW11
Description
Die (25-30 mil) in wafer form.
Die (14 mil) in wafer form.
Die (11 mil) in wafer form.
Min
Nom
Max
Unit
617
685
754
µm
320
355
391
µm
252
280
308
µm
Weida Semiconductor, Inc.
38-xyxyx
Revised August 22, 2001