W3EG264M64ETSR-JD3 Datasheet, PDF (8/13 Pages) White Electronic Designs Corporation – 1GB - 2x64Mx64 DDR SDRAM REGISTERED w/PLL

White Electronic Designs ^{W3EG264M64ETSR-JD3}
ADVANCED
DDR SDRAM COMPONENT ELECTRICAL CHARACTERISTICS AND
RECOMMENDED AC OPERATING CONDITIONS (continued)
Notes 1-5, 7; notes appear following parameter tables; 0°C ≤ TA ≤ +70°C; VCC = +2.5V ±0.2V, VCCQ = +2.5V ±0.2V
AC Characteristics
335
263/265
Parameter
Symbol Min
Max
Min
Max
Units
ACTIVE to READ or WRITE delay
PRECHARGE command period
DQS read preamble
DQS read postamble
ACTIVE bank a to ACTIVE bank b command
DQS write preamble
DQS write preamble setup time
DQS write postamble
Write recovery time
Internal WRITE to READ command delay
Data valid output window
REFRESH to REFRESH command interval
Average periodic refresh interval
Terminating voltage delay to VCC
Exit SELF REFRESH to non-READ command
Exit SELF REFRESH to READ command
tRCD
15
15
ns
tRP
15
15
ns
tRPRE
0.9
1.1
0.9
1.1
tCK
tRPST
0.4
0.6
0.4
0.6
tCK
tRRD
12
15
ns
tWPRE
0.25
0.25
tCK
tWPRES
0
0
ns
tWPST
0.4
0.6
0.4
0.6
tCK
tWR
15
15
ns
tWTR
1
1
tCK
NA
tQH - tDQSQ
tQH - tDQSQ
ns
tREFC
70.3
70.3
μs
tREFI
7.8
7.8
μs
tVTD
0
0
ns
tXSNR
75
75
ns
tXSRD
200
200
tCK
Notes
19
10, 11
9
13
April 2005
Rev. 0
8
White Electronic Designs Corporation • [phone] • www.wedc.com