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W3EG264M64ETSR-JD3 Datasheet, PDF (7/13 Pages) White Electronic Designs Corporation – 1GB - 2x64Mx64 DDR SDRAM REGISTERED w/PLL
White Electronic Designs W3EG264M64ETSR-JD3
ADVANCED
DDR SDRAM COMPONENT ELECTRICAL CHARACTERISTICS AND
RECOMMENDED AC OPERATING CONDITIONS
Notes 1-5, 7; notes appear following parameter tables; 0°C ≤ TA ≤ +70°C; VCC = +2.5V ±0.2V, VCCQ = +2.5V ±0.2V
AC Characteristics
335
263/265
Parameter
Symbol Min
Max
Min
Max
Units
Access window of DQs from CK, CK#
tAC
-0.7
+0.7
-0.75 +0.75
ns
CK high-level width
tCH
0.45
0.55
0.45
0.55
tCK
CK low-level width
tCL
0.45
0.55
0.45
0.55
tCK
Clock cycle time
CL=2.5 tCK (2.5)
6
13
7.5
13
ns
CL=2 tCK (2)
7.5
13
7.5
13
ns
DQ and DM input hold time relative to DQS
tDH
0.45
0.5
ns
DQ and DM input setup time relative to DQS
tDS
0.45
0.5
ns
DQ and DM input pulse width (for each input)
tDIPW
1.75
1.75
ns
Access window of DQS from CK, CK#
tDQSCK
-0.6
+0.6
-0.75 +0.75
ns
DQS input high pulse width
tDQSH
0.35
0.35
tCK
DQS input low pulse width
tDQSL
0.35
0.35
tCK
DQS-DQ skew, DQS to last DQ valid, per group, per access
tDQSQ
0.45
0.35
ns
Write command to first DQS latching transition
tDQSS
0.75
1.25
0.75
1.25
tCK
DQS falling edge to CK rising - setup time
tDSS
0.2
0.2
tCK
DQS falling edge from CK rising - hold time
tDSH
0.2
0.2
tCK
Half clock period
tHP
tCH, tCL
tCH, tCL
ns
Data-out high-impedance window from CK, CK#
tHZ
0.7
0.75
ns
Data-out low-impedance window from CK, CK#
tLZ
-0.7
-0.75
ns
Address and control input hold time (fast slew rate)
tIHf
0.75
0.90
ns
Address and control input set-up time (fast slew rate)
tISf
0.75
0.90
ns
Address and control input hold time (slow slew rate)
tIHs
0.8
1
ns
Address and control input setup time (slow slew rate)
tISs
0.8
1
ns
Address and control input pulse width (for each input)
tIPW
2.2
2.2
ns
LOAD MODE REGISTER command cycle time
tMRD
12
15
ns
DQ-DQS hold, DQS to first DQ to go non-valid, per access
tQH
tHP - tQHS
tHP - tQHS
ns
Data hold skew factor
tQHS
0.55
0.75
ns
ACTIVE to PRECHARGE command
tRAS
42
72,000
40
120,000
ns
ACTIVE to READ with Auto precharge command
tRAP
15
15
ns
ACTIVE to ACTIVE/AUTO REFRESH command period
tRC
60
60
ns
AUTO REFRESH command period
tRFC
72
75
ns
Notes
16
16
22
22
14, 17
14, 17
17
13, 14
18
8, 19
8, 20
6
6
6
6
13, 14
15
21
April 2005
Rev. 0
7
White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com