W764M32V-XSBX Datasheet, PDF (6/16 Pages) White Electronic Designs Corporation – 64Mx32 Flash Multi-Chip Package 3.0V Page Mode Flash Memory

White Electronic Designs
W764M32V-XSBX
ADVANCED*
AC CHARACTERISTICS – WRITE/ERASE/PROGRAM OPERATIONS – WE# CONTROLLED
VCC = 3.3V ± 0.3V, -55°C ≤ TA ≤ +125°C
Parameter
Write Cycle Time (3)
Chip Select Setup Time (3)
Write Enable Pulse Width
Address Setup Time
Data Setup Time
Data Hold Time
Address Hold Time
Write Enable Pulse Width High (3)
Duration of Byte Programming Operation (1)
Sector Erase (2)
Read Recovery Time before Write (3)
VCC Setup Time
Address Setup Time to OE# low during toggle bit
polling
Write Recovery Time from RY/BY# (3)
Program/Erase Valid to RY/BY#
NOTES:
1. Typical value for tWHWH1 is 60 µs.
2. Typical value for tWHWH2 is 0.5 sec.
3. Guaranteed by design, but not tested.
Symbol
tAVAV
tELWL
tWLWH
tAVWL
tDVWH
tWHDX
tWLAX
tWHWL
tWHWH1
tWHWH2
tGHWL
tVCS
tWC
tCS
tWP
tAS
tDS
tDH
tAH
tWPH
tASO
tRB
tBUSY
-100
Min
Max
100
0
35
0
45
0
45
30
500
3.5
0
50
15
0
90
-120
Unit
Min
Max
120
ns
0
ns
50
ns
0
ns
50
ns
0
ns
50
ns
30
ns
500
µs
5
sec
0
ns
50
µs
15
ns
0
ns
90
ns
AC CHARACTERISTICS – READ-ONLY OPERATIONS
VCC = 3.3V ± 0.3V, -55°C ≤ TA ≤ +125°C
Parameter
Symbol
-100
Min
Max
-120
Unit
Min
Max
Read Cycle Time (1)
tAVAV
tRC
100
120
ns
Address Access Time
tAVQV
tACC
100
120
ns
Chip Select Access Time
tELQV
tCE
100
120
ns
Page Access Time
tPACC
25
30
ns
Output Enable to Output Valid
tGLQV
tOE
25
35
ns
Chip Select High to Output High Z
tEHQZ
tDF
20
20
ns
Output Enable High to Output High Z
tGHQZ
tDF
20
20
ns
Output Hold from Addresses, CS# or OE# Change,
tAXQX
tOH
0
Whichever occurs first
0
ns
Output Enable Hold Time (1)
Read
tOEH
0
0
ns
Toggle and
Data# Polling
10
10
ns
1. Guaranteed by design, not tested.
White Electronic Designs Corp. reserves the right to change products or specifications without notice.
March 2006
Rev. 2
6
White Electronic Designs Corporation • [phone] • www.wedc.com