W3EG7235S-JD3 Datasheet, PDF (5/12 Pages) White Electronic Designs Corporation – 256MB - 2x16Mx72 DDR SDRAM REGISTERED ECC, w/PLL

White Electronic Designs
W3EG7235S-JD3
PRELIMINARY
Parameter
Operating Current
Operating Current
Precharge Power-
Down Standby Current
dle Standby Current
Active Power-Down
Standby Current
Active Standby Current
Operating Current
Operating Current
Auto Refresh Current
Self Refresh Current
Operating Current
Rank 1
IDD0
IDD1
IDD2P
IDD2F
IDD3P
IDD3N
IDD4R
IDD4W
IDD5
IDD6
IDD7A
IDD SPECIFICATIONS AND TEST CONDITIONS
0°C ≤ TA ≤ 70°C, VCCQ = 2.5V ± 0.2V, VCC = 2.5V ± 0.2V
Includes PLL and Register Power
Conditions
One device bank; Active = Precharge; tRC = tRC(MIN);
tCK = tCK(MIN); DQ,DM and DQS inputs changing
once per clock cycle; Address and control inputs
changing once every two cycles.
One device bank; Active-Read-Precharge; Burst = 2;
tRC = tRC(MIN);tCK = tCK (MIN); Iout = 0mA; Address
and control inputs changing once per clock cycle.
All device banks idle; Power- down mode; tCK =
tCK(MIN); CKE = (low)
CS# = High; All device banks idle; tCK = tCK(MIN);
CKE = high; Address and other control inputs
changing once per clock cycle. VIN = VREF for DQ,
DQS and DM.
One device bank active; Power-down mode;
tCK(MIN); CKE = (low)
CS# = High; CKE = High; One device bank; Active-
Precharge; tRC = tRAS(MAX); tCK = tCK(MIN); DQ,
DM and DQS inputs changing twice per clock cycle;
Address and other control inputs changing once per
clock cycle.
Burst = 2; Reads; Continuous burst; One device bank
active; Address and control inputs changing once per
clock cycle; tCK = tCK(MIN); IOUT = 0mA.
Burst = 2; Writes; Continous burst; One device bank
active; Address and control inputs changing once per
clock cycle; tCK = tCK(MIN); DQ,DM and DQS inputs
changing twice per clock cycle.
tRC = tRC(MIN)
CKE ≤ 0.2V
Four bank interleaving Reads (BL = 4) with auto
precharge with tRC = tRC (MIN); tCK = tCK(MIN);
Address and control inputs change only during Active
Read or Write commands.
DDR266@CL = 2
Max
2475
2565
54
1120
450
1210
2655
2610
3500
329
4455
DDR266@CL = 2.5
Max
2340
2475
54
1030
360
1120
2520
2475
3410
311
4320
DDR200@CL = 2
Max
2340
2475
54
1030
360
1120
2520
2475
3375
346
4320
Rank2
Stand By
Units State
mA
IDD3N
mA
IDD3N
mA
IDD2P
mA
IDD2F
mA
IDD3P
mA
IDD3N
mA
IDD3N
mA
IDD3N
mA
IDD3N
mA
IDD6
mA
IDD3N
November 2004
Rev. 2
5
White Electronic Designs Corporation • [phone] • www.wedc.com