W3DG648V-D1 Datasheet, PDF (3/6 Pages) White Electronic Designs Corporation – 64MB - 2x4Mx64 SDRAM, UNBUFFERED

White Electronic Designs
W3DG648V-D1
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Voltage on any pin relative to VSS
Voltage on VCC supply relative to VSS
Storage Temperature
Power Dissipation
Short Circuit Current
VIN, VOUT
VCC, VCCQ
TSTG
PD
IOS
Note:
Permanent device damage may occur if “ABSOLUTE MAXIMUM RATINGS” are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
Value
-1.0 ~ 4.6
-1.0 ~ 4.6
-55 ~ +150
8
50
Units
V
V
°C
W
mA
RECOMMENDED DC OPERATING CONDITIONS
Voltage Referenced to: VSS = 0V, TA = 0°C to +70°C
Parameter
Symbol
Min
Typ
Max
Unit
Supply Voltage
VCC
3.0
3.3
3.6
V
Input High Voltage
VIH
2.0
3.0
VCCQ+0.3
V
Input Low Voltage
VIL
-0.3
—
0.8
V
Output High Voltage
VOH
2.4
—
—
V
Output Low Voltage
VOL
—
—
0.4
V
Input Leakage Current
ILI
-10
—
10
µA
Note: 1. VIH (max)= 5.6V AC. The overshoot voltage duration is ≤ 3ns.
2. VIL (min)= -2.0V AC. The undershoot voltage duration is ≤ 3ns.
3. Any input 0V ≤ VIN ≤ VCCQ
Input leakage currents include Hi-Z output leakage for all bi-directional buffers with Tri-State outputs.
Note
1
2
IOH= -2mA
IOL= -2mA
3
CAPACITANCE
TA = 25°C, f = 1MHz, VCC = 3.3V, VREF = 1.4V ± 200mV
Parameter
Input Capacitance (A0-A11)
Input Capacitance (RAS#,CAS#,WE#)
Input Capacitance (CKE0, CKE1)
Input Capacitance (CLK0, CLK1)
Input Capacitance (CS0#, CS1)
Input Capacitance (DQMB0-DQMB7)
Input Capacitance (BA0-BA1)
Data Input/Output Capacitance (DQ0-DQ63)
Symbol
Max
Unit
CIN1
25
pF
CIN2
25
pF
CIN3
25
pF
CIN4
21
pF
CIN5
25
pF
CIN6
12
pF
CIN7
25
pF
COUT
12
pF
July 2005
Rev. 6
3
White Electronic Designs Corporation • [phone] • www.wedc.com